inchange semiconductor isc rf product specification isc website www.iscsemi.cn 1 isc silicon npn rf transistor MMBR911L description high gain g nf = 17 db typ. @ i c = 10 ma, f = 500 mhz low noise figure nf= 1.7db typ. @ f= 500 mhz high current-gain bandwidth product f t = 6.0 ghz typ. @ i c = 30 ma applications designed for low noise, wide dynamic range front-end amplifiers and low-noise vco?s. absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage 20 v v ceo collector-emitter voltage 12 v v ebo emitter-base voltage 2 v i c collector current-continuous 60 ma p c collector power dissipation @t c = 75 0.333 w t j junction temperature 150 t stg storage temperature range -55~150
inchange semiconductor isc rf product specification isc website www.iscsemi.cn 2 isc silicon npn rf transistor MMBR911L electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c = 1ma ; i b = 0 12 v v (br)cbo collector-base breakdown voltage i c = 0.1ma ; i e = 0 20 v v (br)ebo emitter-base breakdown voltage i e = 0.1ma ; i c = 0 2 v i cbo collector cutoff current v cb = 15v; i e = 0 0.05 a h fe dc current gain i c = 30ma ; v ce = 10v 30 200 c ob output capacitance i e = 0 ; v cb = 10v; f= 1mhz 1.0 pf f t current-gain?bandwidth product i c = 30ma ; v ce = 10v; f= 1ghz 6.0 ghz g nf gain@ noise figure i c = 10ma ; v ce = 10v; f= 0.5ghz 17 db g nf gain@ noise figure i c = 10ma ; v ce = 10v; f= 1ghz 11 db nf noise figure i c = 10ma ; v ce = 10v; f= 0.5ghz 2.0 db nf noise figure i c = 10ma ; v ce = 10v; f= 1ghz 2.9 db
inchange semiconductor isc rf product specification 3 isc website www.iscsemi.cn isc silicon npn rf transistor MMBR911L
inchange semiconductor isc rf product specification isc website www.iscsemi.cn 4 isc silicon npn rf transistor MMBR911L s-parameter v ce = 10 v, i c = 2 ma f (mhz) s 11 s 11 s 21 s 21 s 12 s 12 s 22 s 22 200 0.82 ?45 4.14 145 0.06 66 0.88 ?16 500 0.60 ?96 3.23 112 0.09 49 0.71 ?27 1000 0.47 ?149 2.16 85 0.11 49 0.62 ?34 1500 0.46 ?179 1.59 71 0.13 55 0.58 ?43 2000 0.47 162 1.35 57 0.16 62 0.56 ?51 v ce = 10 v, i c = 5 ma f (mhz) s 11 s 11 s 21 s 21 s 12 s 12 s 22 s 22 200 0.66 ?63 8.63 134 0.05 64 0.75 ?25 500 0.43 ?117 5.29 100 0.07 58 0.55 ?31 1000 0.37 ?163 3.05 82 0.11 63 0.48 ?36 1500 0.38 176 2.17 70 0.15 65 0.45 ?44 2000 0.40 160 1.81 57 0.19 65 0.43 ?51
inchange semiconductor isc rf product specification 5 isc website www.iscsemi.cn isc silicon npn rf transistor MMBR911L v ce = 10 v, i c = 10 ma f (mhz) s 11 s 11 s 21 s 21 s 12 s 12 s 22 s 22 200 0.49 ?83 12.70 124 0.04 65 0.62 ?30 500 0.33 ?134 6.42 94 0.07 66 0.44 ?32 1000 0.32 ?171 3.53 80 0.12 70 0.41 ?36 1500 0.35 173 2.46 69 0.16 69 0.38 ?45 2000 0.37 159 2.04 58 0.20 66 0.35 ?52 v ce = 10 v, i c = 20 ma f (mhz) s 11 s 11 s 21 s 21 s 12 s 12 s 22 s 22 200 0.36 ?103 15.25 114 0.03 69 0.52 ?32 500 0.28 ?149 6.95 90 0.06 72 0.39 ?30 1000 0.29 ?176 3.73 78 0.12 73 0.37 ?35 1500 0.33 172 2.60 68 0.17 71 0.34 ?43 2000 0.36 158 2.14 58 0.21 67 0.32 ?52 v ce = 10 v, i c = 30 ma f (mhz) s 11 s 11 s 21 s 21 s 12 s 12 s 22 s 22 200 0.32 ?114 15.64 109 0.03 71 0.48 ?29 500 0.27 ?156 6.92 88 0.06 73 0.38 ?27 1000 0.29 ?178 3.71 78 0.12 74 0.37 ?33 1500 0.34 170 2.58 68 0.16 72 0.34 ?44 2000 0.37 156 2.13 57 0.21 68 0.32 ?51
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